Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages

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Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages1

Transmission X-ray diffraction imaging in both monochromatic and white beam section mode has been used to measure quantitatively the displacement and warpage stress in encapsulated silicon devices. The displacement dependence with position on the die was found to agree well with that predicted from a simple model of warpage stress. For uQFN microcontrollers, glued only at the corners, the measu...

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Non-Destructive Laboratory-Based X-Ray Diffraction Mapping of Warpage in Si Die Embedded in IC Packages

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ژورنال

عنوان ژورنال: Journal of Applied Crystallography

سال: 2017

ISSN: 1600-5767

DOI: 10.1107/s1600576717003132