Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages
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چکیده
منابع مشابه
Nondestructive X-ray diffraction measurement of warpage in silicon dies embedded in integrated circuit packages1
Transmission X-ray diffraction imaging in both monochromatic and white beam section mode has been used to measure quantitatively the displacement and warpage stress in encapsulated silicon devices. The displacement dependence with position on the die was found to agree well with that predicted from a simple model of warpage stress. For uQFN microcontrollers, glued only at the corners, the measu...
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Reliability issues as a consequence of thermal/mechanical stresses created during packaging processes have been the main obstacle towards the realisation of high volume 3D Integrated Circuit (IC) integration technology for future microelectronics. However, there is no compelling laboratory-based metrology that can non-destructively measure or image stress/strain or warpage inside packaged chips...
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ژورنال
عنوان ژورنال: Journal of Applied Crystallography
سال: 2017
ISSN: 1600-5767
DOI: 10.1107/s1600576717003132